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Datasheet File OCR Text: |
@vic MMBTA94 SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L TRANSISTOR PNP 1. BASE 2. EMITTER 3. COLLECTOR 1.02 MMBTA94 FEATURES Power dissipation PCM : 0.35 W Tamb=25 Collector current ICM : -0.2 A Collector-base voltage V(BR)CBO : -400 V Operating and storage junction temperature range TJTstg: -55 to +150 ELECTRICAL CHARACTERISTICS Tamb=25 otherwise specified Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current Symbol V (BR) CBO V (BR) CEO V (BR) EBO ICBO ICEO IEBO hFE1 DC current gain hFE2 hFE3 VCE (sat) Collector-emitter saturation voltage VCE (sat) Base-emitter saturation voltage Transition frequency VBE (sat) fT Test 0.950.025 2.800.05 1.600.05 unless conditions MIN -400 -400 -5 -0.1 -5 -0.1 80 70 60 -0.2 -0.3 -0.75 50 V V V MHz 300 TYP MAX UNIT V V V A A A Ic= -100A IE=0 IC= -1 mAIB=0 IE=-100AIC=0 VCB=-400 V, IE=0 VCE=-400 V, IB=0 VEB= -4 V, IC=0 VCE=-10V, IC=-10 mA VCE=-10V, IC=-1mA VCE=-10V, IC=-100 mA IC=-10 mAIB=-1mA IC=-50 mAIB=-5mA IC=-10 mAIB= -1 mA VCE=-20V IC=-10mA f =30MHz MARKING:4D Copyright @vic Electronics Corp. 1 Website http://www.avictek.com 0.35 2.920.05 1.9 |
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